The Critical Influence of Spin‐Dry Technique on the Surface Passivation Quality of Crystalline Silicon Solar Cell Structures

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This study examines the effects of spin‐dry (SD) and N2 blow‐dry (ND) techniques on the quality and surface passivation performance of silicon oxide grown in ozone‐dissolved deionized water. The SD method achieves greater oxide thickness uniformity, averaging 1.39 nm ± 4.17% across 49 points, compared to 1.68 nm ± 21.67% for the ND wafers. However, persistently poor passivation of ozonated oxide‐grown wafers following the SD process is exhibited, with carrier lifetime, τeff < 0.3 ms and saturation current density, J0 (per side) ranging from 26 to 45 fA cm2. These findings are analyzed in the context of the fundamental phenomena involved in the drying processes of both techniques. Following this, an optimized spin‐drying process is developed, resulting in improved τeff and J0 values of 1.4 ms and 5.6 fA cm−2, respectively. Scanning electron microscopy further confirms that the oxide films dried with the enhanced SD technique are free of pinholes.